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Sep 28, 2011

Ferroelectric Transistor Memory Could run on 99 Percent Less Power Than Flash

We've been keeping an optimistic eye on the progress of Ferroelectric Random Access Memory (FeRAM) for a few years now, not least because it offers the tantalizing promise of 1.6GB/s read and write speeds and crazy data densities. But researchers at Purdue University reckon we've been looking in the wrong place this whole time: the real action is with their development of FeTRAM, which adds an all-important 'T' for 'Transistor'. Made by combining silicon nanowires with a ferroelectric polymer, Purdue's material holds onto its 0 or 1 polarity even after being read, whereas readouts from capacitor-based FeRAM are destructive. Although still at the experimental stage, this new type of memory could boost speeds while also reducing power consumption by 99 percent. Quick, somebody file a patent. Oh, they already did.
 
 

5 comments:

Athanasian Complexio said...

Damn, that sounds pretty monstrous. However, wouldn't it make it more susceptible to magnetism?

James said...

awesome! :D

YeamieWaffles said...

Cool news. Always good to save power and 99% of power is a huge chunk.

Give Everything said...

wow this looks good!

Electric Addict said...

daaaaamn computers gonna be so fast it will be mind blowing!